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Ordering number : ENA0557
2SK4089LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4089LS
Features
* * * *
General-Purpose Switching Device Applications
Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *3 Avalanche Current *4 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature SANYO's ideal heat dissipation condition PW10s, duty cycle1% Tc=25C (SANYO's ideal heat dissipation condition) Conditions Ratings 650 30 12 8.5 48 2.0 40 150 --55 to +150 84 12 Unit V V A A A W W C C mJ A
*1 Shows chip capability *2 Package limited *3 VDD=99V, L=1mH, IAV=12A *4 L1mH, single pulse Marking : K4089
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22107QB TI IM TC-00000373 No. A0557-1/5
2SK4089LS
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=10mA, VGS=0V VDS=520V, VGS=0V VGS=30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=12A VDS=200V, VGS=10V, ID=12A VDS=200V, VGS=10V, ID=12A IS=12A, VGS=0V Ratings min 650 100 100 3 3.8 7.5 0.55 1200 208 44 27 66 140 45 45.4 7.7 26.1 0.9 1.2 0.72 5 typ max Unit V
A
nA V S pF pF pF ns ns ns ns nC nC nC V
Package Dimensions
unit : mm (typ) 7509-002
10.0 3.2
3.5 7.2
4.5 2.8
16.1
16.0
0.9 1.2 0.75
14.0
3.6
1.2 0.7
123
2.4
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS)
2.55
2.55
Switching Time Test Circuit
VIN 10V 0V VIN ID=6A RL=33 VDD=200V
0.6
Avalanche Resistance Test Circuit
L 50 RG
D
PW=10s D.C.0.5%
VOUT
2SK4089LS 10V 0V 50 VDD
G
2SK4089LS P.G RGS=50
S
No. A0557-2/5
2SK4089LS
35
ID -- VDS
Tc=25C
10V
35
ID -- VGS
VDS=20V
30
30
Tc= --25C 25C 75C
Drain Current, ID -- A
25
8V
Drain Current, ID -- A
15V
25
20
20
15
15
10
10
6V
5 5
VGS=5V
0 0 5 10 15 20 25 30 IT11773 1.6 0 0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V
2.0 1.8
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
IT11774
RDS(on) -- Tc
ID=6A
Static Drain-to-Source On-State Resistance, RDS(on) --
1.6 1.4 1.2 1.0
Static Drain-to-Source On-State Resistance, RDS(on) --
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 --50
Tc=75C
0.8 0.6 0.4 0.2 0 3 5 7 9 11 13 15 IT11775
=6 ID
A
0V =1 GS ,V
25C --25C
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
3
Case Temperature, Tc -- C
5 3 2 10 7 5 3 2 1.0 7 5 3 2
IT11776
yfs -- ID
IS -- VSD
VGS=0V
Forward Transfer Admittance, yfs -- S
2
VDS=10V
7 5 3 2
C 25
= Tc
--2
5C
75
C
Source Current, IS -- A
10
7 5 3 0.1
3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 0.01 0.2
0.4
0.6
--25C
0.8
1.0
0.1 7 5
Tc=7 5C 25C
1.0
1.2
1.4 IT11778
Drain Current, ID -- A
1000 7
IT11777 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
5 3 2
VDD=200V VGS=10V
td (off)
Ciss, Coss, Crss -- pF
Ciss
100 7 5 3 2
Coss
tr
tf
td(on)
Crss
10 0.1
10 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 10 20 30 40 50 IT11780
Drain Current, ID -- A
IT11779
Drain-to-Source Voltage, VDS -- V
No. A0557-3/5
2SK4089LS
10 9
VGS -- Qg
VDS=200V ID=12A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 IT11781
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
ASO
IDP=48A
IDc(*1)=12A IDpack(*2)=8.5A
DC
10
op
PW10s 10 s 10 0 s 1m 10 s ms
0m
s
n
era
Operation in this area is limited by RDS(on).
tio
0.01 0.1
Tc=25C Single pulse
23 5 7 1.0
*1. Shows chip capability *2. SANYO's ideal heat dissipation condition
23 5 7 10 23 5 7 100 23 5 7 1k IT11782
Total Gate Charge, Qg -- nC
2.5
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
45 40 35 30 25 20 15 10 5 0
PD -- Tc
Allowable Power Dissipation, PD -- W
2.0
1.5
1.0
0.5
0 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
120
IT11730
Case Temperature, Tc -- C
IT11742
EAS -- Ta
Avalanche Energy derating factor -- %
100
80
60
40
20
0 0 25 50 75 100 125 150 175 IT10478
Ambient Temperature, Ta -- C
No. A0557-4/5
2SK4089LS
Note on usage : Since the 2SK4089LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice.
PS No. A0557-5/5

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